首页>PTF191601E>规格书详情
PTF191601E中文资料英飞凌数据手册PDF规格书
PTF191601E规格书详情
描述 Description
The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.
特性 Features
• Thermally-enhanced packaging
• Broadband internal matching
• Typical EDGE performance
- Average output power = 80 W
- Gain = 14 dB
- Efficiency = 35
- EVM = 2.5
• Typical CW performance
- Output power at P–1dB = 180 W
- Gain = 13 dB
- Efficiency = 47
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
160 W (CW) output power
产品属性
- 型号：
PTF191601E
- 制造商：
INFINEON
- 制造商全称：
Infineon Technologies AG
- 功能描述：
Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
1844+ |
NA |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
MOT |
23+ |
高频管 |
155 |
专营高频管模块,全新原装! |
询价 | ||
INFINON |
24+ |
500 |
现货供应 |
询价 | |||
INFINEON |
05/06+ |
369 |
全新原装100真实现货供应 |
询价 | |||
INFINEON |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
询价 | ||
INFINEON |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
INFINEON |
23+ |
原厂封装 |
7936 |
询价 | |||
INFINEON |
24+ |
高频管 |
4500 |
原装正品!公司现货!欢迎来电! |
询价 | ||
INFINON |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
INFINEON/英飞凌 |
23+ |
Description |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 |
