Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and re

文件：206.33 Kbytes 页数：10 Pages

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英飞凌

Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

Infineon

英飞凌

LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

Description The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o

文件：61.2 Kbytes 页数：4 Pages

INFINEON

英飞凌

Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and re

文件：206.33 Kbytes 页数：10 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

Description The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average o

文件：61.2 Kbytes 页数：4 Pages

INFINEON

英飞凌