30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor

Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Guaranteed Pe

文件：94.88 Kbytes 页数：6 Pages

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165 Watts, 860-900 MHz LDMOS Field Effect Transistor

Description The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime a

文件：163.98 Kbytes 页数：6 Pages

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5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40 efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Guaranteed Performance at 1.99 G

文件：83.73 Kbytes 页数：6 Pages

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6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor

Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50 efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 1.5 GHz, 28 Volts

文件：337.74 Kbytes 页数：6 Pages

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60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime

文件：324.91 Kbytes 页数：6 Pages

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12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

Description The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output. Nitride surface passivation and gold metallization ensure excellent device reliability. •

文件：141.54 Kbytes 页数：4 Pages

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120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime a

文件：420.28 Kbytes 页数：6 Pages

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50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

Description The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device

文件：263.22 Kbytes 页数：6 Pages

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135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor

Description The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated at 135 watts minimum power outpt. Nitride surface passivation and full gold metallization

文件：291.84 Kbytes 页数：6 Pages

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85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cellular, GSM and D-AMPS applications. This device operates at 50 efficiency with 13.5 dB of gain. Full gold metallization ensures excellent device lifetime and reliability. • INTERNALLY MATCHED • Performance at 8

文件：177.07 Kbytes 页数：6 Pages

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