165 Watts, 860-900 MHz LDMOS Field Effect Transistor

Description The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime a

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ERICSSON

爱立信

165 Watts, 860?00 MHz LDMOS Field Effect Transistor

Ericsson

爱立信

10A 100V HPTR Schottky Rectifier

文件：770.19 Kbytes 页数：7 Pages

PFC

节能元件

10A 100V HPTR Schottky Rectifier

文件：770.19 Kbytes 页数：7 Pages

PFC

节能元件

10A 100V HPTR Schottky Rectifier

文件：770.19 Kbytes 页数：7 Pages

PFC

节能元件