165 Watts, 860-900 MHz LDMOS Field Effect Transistor

Description The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime a

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165 Watts, 860?00 MHz LDMOS Field Effect Transistor

Ericsson

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ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere)

VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge,

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ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere)

VOLTAGE 20 to 150 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge,

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SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

VOLTAGE - 20 to 1 00 Volts CURRENT - 10 .0 Amperes FEATURES • Plastic package has Underwriters Laboratory Fl ammability Classification 9 4V-O • For thorough hole applications • Low profile package • Built- in strain relief • Metal to silicon rectifier majority carr

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