135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor

Description The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated at 135 watts minimum power outpt. Nitride surface passivation and full gold metallization

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ERICSSON

爱立信

135 Watts, 1.4?.6 GHz GOLDMOS Field Effect Transistor

Ericsson

爱立信

101mm x 25mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 565mm GREEN, 52 CHIPS, 4.2V 260mA

文件：51.73 Kbytes 页数：1 Pages

LUMEX

101mm x 25mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 565NM green

文件：51.73 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

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101mm x 25mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 565NM green

文件：55.05 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商