LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz

Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal

文件：449.03 Kbytes 页数：9 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz

Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal

文件：449.03 Kbytes 页数：9 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz

Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25 - IM3 = –37 dBc - ACPR

文件：169.14 Kbytes 页数：8 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz

Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25 - IM3 = –37 dBc - ACPR

文件：169.14 Kbytes 页数：8 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz

Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25 - IM3 = –37 dBc - ACPR

文件：169.14 Kbytes 页数：8 Pages

INFINEON

英飞凌

Miniature Power Relay PTF

文件：261.459 Kbytes 页数：3 Pages

MACOM

Level sensor

文件：481.84 Kbytes 页数：2 Pages

CELDUC

凡纪继电器

Panel Control

文件：204.72 Kbytes 页数：3 Pages

BOURNS

伯恩斯

Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz

文件：245.11 Kbytes 页数：11 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz

文件：245.11 Kbytes 页数：11 Pages

INFINEON

英飞凌