PTF210101M分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

PTF210101M属于分立半导体产品的晶体管-FETMOSFET-射频。由英飞凌科技股份公司制造生产的PTF210101M晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

描述 Description

The PTF210101M is an unmatched 10-watt GOLDMOS® FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint.

特性 Features

• Typical WCDMA performance

- Average output power = 2.0 W

- Gain = 15 dB

- Efficiency = 20

- ACPR = –45 dB

• Typical CW performance

- Output Power at P–1dB = 10 W

- Gain = 14 dB

- Efficiency = 50

• Integrated ESD protection:

Human Body Model Class 1 (minimum)

• Excellent thermal stability

• Low HCI drift

• Capable of handling 10:1 VSWR @ 28 V,

10 W (CW) output power

• Pb-free and RoHS compliant