丝印：NX7002BK；Package：TO-236AB；60 V, N-channel Trench MOSFET

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丝印：NX7002BK；Package：TO-236AB；60 V, N-channel Trench MOSFET

文件：733.87 Kbytes 页数：16 Pages

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丝印：0001；Package：SOT8001；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET t

文件：278.34 Kbytes 页数：14 Pages

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丝印：LT；Package：SOT363；60 V, dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology

文件：731.73 Kbytes 页数：16 Pages

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60V N-Channel Mosfet

Application ®@ Direct logic evel interface: TTLICMOS ® Drivers: relays, solenoids, lamps, hammers, display, memories, transistors, elc ® Battery operated systems. © Solidstate relays

文件：918.89 Kbytes 页数：3 Pages

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60V Dual N-Channel Enhancement Mode MOSFET

Features | © Fast switching ® Green Device Available ® Suit for 1.5V Gate Drive Applications |

文件：983.64 Kbytes 页数：3 Pages

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60 V, N-channel Trench MOSFET

文件：273.97 Kbytes 页数：16 Pages

PHI

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Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

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Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes 页数：234 Pages

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丝印：WZ；Package：DFN1006-3；60 V, N-channel Trench MOSFET

文件：729.1 Kbytes 页数：16 Pages

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