丝印：LT；Package：SOT363；60 V, dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology

文件：731.73 Kbytes 页数：16 Pages

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安世安世半导体(中国)有限公司

60 V, dual N-channel Trench MOSFET

文件：301.63 Kbytes 页数：16 Pages

PHI

飞利浦

60 V, dual N-channel Trench MOSFET

文件：301.63 Kbytes 页数：16 Pages

PHI

飞利浦

60 V, dual N-channel Trench MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Very fast switching\n• Trench MOSFET technology\n• ElectroStatic Discharge (ESD) protection > 2 kV HBM;

Nexperia

安世