NXH800A100L4Q2F2S2G

Marking：NXH800A100L4Q2F2S2G；Package：Q2PACK；Three Level ANPC Q2Pack Module

Thishigh−density,integratedpowermodulecombines high−performanceIGBTswithruggedanti−paralleldiodes. Features •ExtremelyEfficientTrenchwithFieldStopTechnology •LowSwitchingLossReducesSystemPowerDissipation •ModuleDesignOffersHighPowerDensity •LowInductiveLayo

NXH800A100L4Q2F2S2G

Marking：NXH800A100L4Q2F2S2G；Package：Q2PACK；Three Level ANPC Q2Pack Module

Thishigh−density,integratedpowermodulecombines high−performanceIGBTswithruggedanti−paralleldiodes. Features •ExtremelyEfficientTrenchwithFieldStopTechnology •LowSwitchingLossReducesSystemPowerDissipation •ModuleDesignOffersHighPowerDensity •LowInductiveLayo

NXH800A100L4Q2F2S2G

Marking：NXH800A100L4Q2F2S2G；Package：Q2PACK；Three Level ANPC Q2Pack Module

Thishigh−density,integratedpowermodulecombines high−performanceIGBTswithruggedanti−paralleldiodes. Features •ExtremelyEfficientTrenchwithFieldStopTechnology •LowSwitchingLossReducesSystemPowerDissipation •ModuleDesignOffersHighPowerDensity •LowInductiveLayout

NXH80B120MNQ0SNG

Marking：NXH80B120MNQ0SNG；Package：Q0BOOST；Silicon Carbide (SiC) Module – EliteSiC, 80 mohm SiC M1 MOSFET, 1200 V 20 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package

TheNXH80B120MNQ0SNGisapowermodulecontainingadual booststage.TheintegratedSiCMOSFETsandSiCDiodesprovide lowerconductionlossesandswitchinglosses,enablingdesignersto achievehighefficiencyandsuperiorreliability. Features •1200V80mSiCMOSFETs •LowReverseRe

NXS0104PW

Marking：NXS0104；Package：SOT402-1；Dual supply translating transceiver; open drain; auto direction sensing

1.Generaldescription TheNXS0104isa4-bit,dualsupplytranslatingtransceiverwithautodirectionsensing,that enablesbidirectionalvoltageleveltranslation.Itfeaturestwo4-bitinput-outputports(AnandBn), oneoutputenableinput(OE)andtwosupplypins(VCC(A)andVCC(B)).VCC(A

NXS0104PW-Q100

Marking：NXS0104；Package：TSSOP14；Dual supply translating transceiver; open drain; auto direction sensing

1.Generaldescription TheNXS0104-Q100isa4-bit,dualsupplytranslatingtransceiverwithautodirectionsensing,that enablesbidirectionalvoltageleveltranslation.Itfeaturestwo4-bitinput-outputports(AnandBn), oneoutputenableinput(OE)andtwosupplypins(VCC(A)andVCC(B)).

NXU0104PW-Q100

Marking：NXU0104；Package：TSSOP14；4-bit dual-supply voltage level translating buffer with Schmitt-trigger; 3-state

1.Generaldescription TheNXU0104-Q100isa4-bit,dual-supplylevel translatingbufferwithSchmitt-triggerinputsand3- stateoutputs.Itfeaturesfourdatainputs(An),four dataoutputs(YBn)andanoutputenableinput(OE). BothVCCAandVCCBcanbesuppliedatanyvoltage between0.9

NXU0204PW-Q100

Marking：NXU0204；Package：TSSOP14；4-bit dual-supply voltage level translating buffer with Schmitt-trigger; 3-state

1.Generaldescription TheNXU0204-Q100isa4-bit,dual-supplylevel translatingbufferwithSchmitt-triggerinputsand3- stateoutputs.Itfeaturesfourdatainputs(A1,A2,B3 andB4),fourdataoutputs(YB1,YB2,YA3andYA4) andanoutputenableinput(OE). BothVCCAandVCCBcanbesu

NXU0304PW-Q100

Marking：NXU0304；Package：TSSOP14；4-bit dual-supply voltage level translating buffer with Schmitt-trigger; 3-state

1.Generaldescription TheNXU0304-Q100isa4-bit,dual-supplylevel translatingbufferwithSchmitt-triggerinputsand3- stateoutputs.Itfeaturesfourdatainputs(AnandB4), fourdataoutputs(YBnandYA4)andanoutputenable input(OE). BothVCCAandVCCBcanbesuppliedatanyvolt

SMBJ90A-AT

Marking：NXT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedorplanarjunction Excellentclampingcapability Repetitionrate(dutycycle):0.01 Lowprofilepackageandlowinductance 600WPeakPulsepowercapabilityat10×1000μswaveform Fastresponsetime:typicallylessthan1.0psfrom0VtoVBRmin Hightemperaturesolde