丝印：NX138AK；Package：TO-236AB；60 V, N-channel Tench MOSFET

文件：787.53 Kbytes 页数：15 Pages

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安世安世半导体(中国)有限公司

丝印：NX138AKS；Package：TSSOP6；60 V, dual N-channel Trench MOSFET

文件：789.86 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：NX138AK；Package：TO-236AB；60 V, N-channel Tench MOSFET

文件：787.53 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：NX138AKS；Package：TSSOP6；60 V, dual N-channel Trench MOSFET

文件：789.86 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：0001；Package：SOT8001；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET

文件：286.38 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6A；Package：SOT883；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET t

文件：282.74 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司