丝印：NX3020NAK；Package：TO-236AB；30 V, single N-channel Trench MOSFET

文件：719.67 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：NX3020NAKT；Package：SC-75；30 V, 180 mA N-channel Trench MOSFET

文件：358.24 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：NX3020NAK；Package：TO-236AB；30 V, single N-channel Trench MOSFET

文件：719.67 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：NX3020NAKT；Package：SC-75；30 V, 180 mA N-channel Trench MOSFET

文件：358.24 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：Ua；Package：SOT363；30 V, 180 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • ESD protection • Low

文件：720.62 Kbytes 页数：15 Pages

NEXPERIA

安世

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：487.15 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET

Application « Reverse Battery protection » Load switch « Power management » Motor Control

文件：2.01275 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

Dual N-Channel MOSFET

Application « Reverse Battery protection » Load switch « Power management » Motor Control

文件：3.08675 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

30 V, single N-channel Trench MOSFET

文件：256.66 Kbytes 页数：15 Pages

PHI

PHI

丝印：Ua*；Package：SOT-363；30 V, 180 mA dual N-channel Trench MOSFET

文件：287.91 Kbytes 页数：15 Pages

PHI

PHI