首页 >NTBG022N120M3S>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NTBG022N120M3S | MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L 1200 V, 22 m, 58 A Features •Typ.RDS(on)=22m •Lowswitchinglosses(Typ.EON485Jat40A,800V) •100AvalancheTested •TheseDevicesareRoHSCompliant TypicalApplications •SolarInverters •ElectricVehicleChargingStations •UninterruptiblePowerSupplies(UPS) •EnergyStorageSystems | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
NTBG022N120M3S | Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L Features •Typ.RDS(on)=22m •Lowswitchinglosses(Typ.EON485Jat40A,800V) •100AvalancheTested •TheseDevicesareRoHSCompliant TypicalApplications •SolarInverters •ElectricVehicleChargingStations •UninterruptiblePowerSupplies(UPS) •EnergyStorageSystems | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
NTBG022N120M3S | Silicon Carbide (SiC) MOSFET - EliteSiC, 22mohm, 1200V, M3S, D2PAK-7L Features •Typ.RDS(on)=22m •UltraLowGateCharge(QG(tot)=151nC) •HighSpeedSwitchingwithLowCapacitance(Coss=146pF) •100AvalancheTested •TheseDevicesareRoHSCompliant TypicalApplications •SolarInverters •ElectricVehicleChargingStations •Uninterruptible | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
NTBG022N120M3S | SiC N-Channel MOSFET FEATURES ·Typ.RDS(on)=960mΩ ·100AvalancheTested ·RoHSCompliant APPLICATIONS ·SolarInverters ·ElectricVehicleChargingStations ·UninterruptiblePowerSupplies(UPS) ·EnergyStorageSystems ·SwitchModePowerSupplies(SMPS) | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L Features •Typ.RDS(on)=22m •Lowswitchinglosses(Typ.EON485Jat40A,800V) •100AvalancheTested •TheseDevicesareRoHSCompliant TypicalApplications •SolarInverters •ElectricVehicleChargingStations •UninterruptiblePowerSupplies(UPS) •EnergyStorageSystems | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 22mohm, 1200V, M3S, D2PAK-7L Features •Typ.RDS(on)=22m •UltraLowGateCharge(QG(tot)=151nC) •HighSpeedSwitchingwithLowCapacitance(Coss=146pF) •100AvalancheTested •TheseDevicesareRoHSCompliant TypicalApplications •SolarInverters •ElectricVehicleChargingStations •Uninterruptible | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–22mohm,1200V,M3,TO-247-3L Features •Typ.RDS(on)=22m@VGS=18V •UltraLowGateCharge(QG(tot)=139nC) •LowEffectiveOutputCapacitance(Coss=141pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb-Free2LI(onsecondlevelinterconnection) TypicalApplic | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-SiliconCarbide(SiC),SingleN-Channel,M3,D2PAK-7L1200V,22m,58A Features •Typ.RDS(on)=22m@VGS=18V •UltraLowGateCharge(QG(tot)=148nC) •HighSpeedSwitchingwithLowCapacitance(Coss=148pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •TheseDevicesareRoHSCompliant TypicalApplications •AutomotiveOnBoardC | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–22mohm,1200V,M3,D2PAK-7L Features •Typ.RDS(on)=22m@VGS=18V •UltraLowGateCharge(QG(tot)=148nC) •HighSpeedSwitchingwithLowCapacitance(Coss=148pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •TheseDevicesareRoHSCompliant TypicalApplications •AutomotiveOnBoardC | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
D2PAK7 (TO-263-7L HV) |
100000 |
全新原装 |
询价 | ||
ONN |
23+ |
N/A |
790 |
原装原装原装哈 |
询价 | ||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
onsemi |
23+ |
D2PAK-7L |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
onsemi |
23/22+ |
NA |
9000 |
代理渠道.实单必成 |
询价 | ||
ON Semiconductor |
23+/22+ |
790 |
原装进口订货7-10个工作日 |
询价 | |||
一级代理 |
23+ |
N/A |
65700 |
一级代理放心采购 |
询价 | ||
ST |
22+ |
598 |
原装实报价优,Q,1296807626 |
询价 | |||
ON Semiconductor |
22+ |
800 |
全新原装深圳现货 |
询价 | |||
ON |
22+ |
NA |
598 |
原装正品支持实单 |
询价 |
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