Passive Components

文件：1.53822 Mbytes 页数：16 Pages

TEC

泰科电子

Thermistor

文件：992.64 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：NTC；Package：SOT8061-1；Wide Vcc range quasi-resonant flyback controller

1. General description The NEX806 device series (NEX806xx) are high frequency quasi-resonant PWM controllers implemented with peak current mode control. As the load changes, the NEX806 device automatically switches mode between Quasi-Resonant (QR) mode, Discontinuous Conduction Mode (DCM) an

文件：372.89 Kbytes 页数：21 Pages

NEXPERIA

安世

丝印：NTC；Package：SOD-123FL；Transient Voltage Suppressors (TVS) Data Sheet

Features ■ For surface mounted applications in order to optimize board space ■ Low profile package ■ Glass passivated junction ■ Low inductance ■ Excellent clamping capability ■ 400W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle): 0.01% ■ Fast response

文件：856.55 Kbytes 页数：4 Pages

SHUNYE

顺烨电子

Strong power and strong capability of surge current protection.

Features ·Strong power and strong capability of surge current protection. ·Characteristics Fast response to the rapidly surge. ·Big material constant(B value),Small remain resistance. ·High reliability. ··Integral series, Extensive operating range. ·Operating Temp. -55℃～+200℃ application

文件：243.12 Kbytes 页数：5 Pages

EXSENSE

爱晟

Strong power and strong capability of surge current protection.

Features ·Strong power and strong capability of surge current protection. ·Characteristics Fast response to the rapidly surge. ·Big material constant(B value),Small remain resistance. ·High reliability. ··Integral series, Extensive operating range. ·Operating Temp. -55℃～+200℃ application

文件：243.12 Kbytes 页数：5 Pages

EXSENSE

爱晟

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, Bare Die

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

文件：179.34 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, Bare Die

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

文件：179.34 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Conversion power, switch mode power supply, UPS power protection

FEATURES Small in size,high-powered, and very capable of bringing down the surge current; Quick in reaction; High in B value and low in residual current; Long service life and high reliability; High coefficient of safety and wide range of application.

文件：159.34 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Conversion power, switch mode power supply, UPS power protection

FEATURES Small in size,high-powered, and very capable of bringing down the surge current; Quick in reaction; High in B value and low in residual current; Long service life and high reliability; High coefficient of safety and wide range of application.

文件：159.34 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商