Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, Bare Die

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

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MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 40 m

文件：223.46 Kbytes 页数：8 Pages

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Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, Die

Silicon Carbide (SiC) MOSFET uses a completely new technology\nthat provide superior switching performance and higher reliability\ncompared to Silicon. In addition, the low ON resistance and compact\nchip size ensure low capacitance and gate charge. Consequently,\nsystem benefits include highest eff • 1200 V\n• TJ= 175°C\n• High Speed Switching with Low Capacitance\n• 100% UIL Tested;

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Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, Bare Die

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

文件：179.34 Kbytes 页数：8 Pages

ONSEMI

安森美半导体