丝印：TBL045065SC1；Package：H-PSOF8L；Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, TOLL

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies)

文件：240.12 Kbytes 页数：8 Pages

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碳化硅（SiC）MOSFET – EliteSiC系列，33 mohm，650V，M2，TOLL封装

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • High Junction Temperature (Tj = 175°C)\n• Higher system reliability\n• Leadless thin SMD package\n• High power density\n• Kelvin Source Configuratio\n• Low gate noise and switching loss\n• Ultra Low Gate Charge (Qg(tot) = 105 nC)\n• Low switching loss\n• Low Effective Output Capacitance (Coss = 16;

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安森美半导体

Silicon Carbide SiC MOSFET - 32 mohm, 650 V, M2, TO-247-3L

Features • Typ. RDS(on) = 32 m @ VGS = 18 V Typ. RDS(on) = 42 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ

文件：278.79 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, Power88

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies)

文件：312.73 Kbytes 页数：5 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, Power88

Features  Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V  Ultra Low Gate Charge (QG(tot) = 105 nC)  Low Effective Output Capacitance (Coss = 162 pF)  100 Avalanche Tested  TJ = 175C  RoHS Compliant Typical Applications  SMPS (Switching Mode Power Supplies)

文件：557.7 Kbytes 页数：8 Pages

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安森美半导体