Silicon Carbide SiC MOSFET - 32 mohm, 650 V, M2, TO-247-3L

Features • Typ. RDS(on) = 32 m @ VGS = 18 V Typ. RDS(on) = 42 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ

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Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • High Junction Temperature\n• Tj = 175°C\n• 100% UIL Tested\n• RoHS Compliant\n• High Speed Switching and Low Capacitance\n• 650V rated\n• Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 66A;

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安森美半导体

Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, Power88

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies)

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安森美半导体

Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, Power88

Features  Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V  Ultra Low Gate Charge (QG(tot) = 105 nC)  Low Effective Output Capacitance (Coss = 162 pF)  100 Avalanche Tested  TJ = 175C  RoHS Compliant Typical Applications  SMPS (Switching Mode Power Supplies)

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安森美半导体

Silicon Carbide SiC MOSFET - 31 mohm, 650V,M2, D2PAK-71

Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exem

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安森美半导体