首页 >NTMT045N065SC1>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NTMT045N065SC1 | Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, Power88 Features •Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V •UltraLowGateCharge(QG(tot)=105nC) •LowEffectiveOutputCapacitance(Coss=162pF) •100AvalancheTested •TJ=175°C •RoHSCompliant TypicalApplications •SMPS(SwitchingModePowerSupplies) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
NTMT045N065SC1 | Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, Power88 Features Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V UltraLowGateCharge(QG(tot)=105nC) LowEffectiveOutputCapacitance(Coss=162pF) 100AvalancheTested TJ=175C RoHSCompliant TypicalApplications SMPS(SwitchingModePowerSupplies) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, Power88 Features Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V UltraLowGateCharge(QG(tot)=105nC) LowEffectiveOutputCapacitance(Coss=162pF) 100AvalancheTested TJ=175C RoHSCompliant TypicalApplications SMPS(SwitchingModePowerSupplies) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L650V,31m,62A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–31mohm,650V,M2,D2PAK-7L Features •Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V •UltraLowGateCharge(QG(tot)=105nC) •LowEffectiveOutputCapacitance(Coss=168pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(o | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–EliteSiC,31mohm,650V,M2,D2PAK-7L Features •Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V •UltraLowGateCharge(QG(tot)=105nC) •LowEffectiveOutputCapacitance(Coss=168pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(o | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET-33mohm,650V,M2,TOLL Features •Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V •UltraLowGateCharge(QG(tot)=105nC) •LowEffectiveOutputCapacitance(Coss=162pF) •100AvalancheTested •TJ=175°C •RoHSCompliant TypicalApplications •SMPS(SwitchingModePowerSupplies) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconCarbideSiCMOSFET-32mohm,650V,M2,TO-247-3L Features •Typ.RDS(on)=32m@VGS=18V Typ.RDS(on)=42m@VGS=15V •UltraLowGateCharge(QG(tot)=105nC) •HighSpeedSwitchingwithLowCapacitance(Coss=162pF) •100AvalancheTested •TJ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconCarbideSiCMOSFET-31mohm,650V,M2,D2PAK-71 Features •Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V •UltraLowGateCharge(QG(tot)=105nC) •LowEffectiveOutputCapacitance(Coss=168pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexem | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TDFN4 8x8, 2P |
100000 |
全新原装 |
询价 | ||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
onsemi |
23+ |
TDFN-4 |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
onsemi |
23/22+ |
NA |
9000 |
代理渠道.实单必成 |
询价 | ||
ONSEMI |
22+ |
SMD |
15000 |
询价 | |||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
ON(安森美) |
2324+ |
TDFN-4 |
78920 |
二十余载金牌老企,研究所优秀合供单位,您的原厂窗口 |
询价 | ||
onsemi(安森美) |
23+ |
TDFN4 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ON(安森美) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 |
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