Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, Power88

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies)

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Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, Power88

Features  Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V  Ultra Low Gate Charge (QG(tot) = 105 nC)  Low Effective Output Capacitance (Coss = 162 pF)  100 Avalanche Tested  TJ = 175C  RoHS Compliant Typical Applications  SMPS (Switching Mode Power Supplies)

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, Power88

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • Max Junction Temperature 175°C\n• Leadless thin SMD package\n• Kelvin Source Configuration\n• Ultra Low Gate Charge (Qg(tot) = 105 nC)\n• Low Effective Output Capacitance (Coss = 162 pF)\n• Zero reverse recovery current of body diode\n• Typ. RDS(on) = 33 mΩ @ Vgs : 18V Low conduction loss\n• 100&#;

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, Power88

Features  Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V  Ultra Low Gate Charge (QG(tot) = 105 nC)  Low Effective Output Capacitance (Coss = 162 pF)  100 Avalanche Tested  TJ = 175C  RoHS Compliant Typical Applications  SMPS (Switching Mode Power Supplies)

文件：557.7 Kbytes 页数：8 Pages

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安森美半导体