Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, Power88

Features  Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V  Ultra Low Gate Charge (QG(tot) = 105 nC)  Low Effective Output Capacitance (Coss = 162 pF)  100 Avalanche Tested  TJ = 175C  RoHS Compliant Typical Applications  SMPS (Switching Mode Power Supplies)

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ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 31 mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o

文件：325.13 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

ON
SOT883

ON

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NF/耐福
QFN40

NF/耐福

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ON
SOT23

ON

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