NTBG045N065SC1_V01中文资料安森美半导体数据手册PDF规格书

Features

• Typ. RDS(on) = 31 m @ VGS = 18 V

Typ. RDS(on) = 45 m @ VGS = 15 V

• Ultra Low Gate Charge (QG(tot) = 105 nC)

• Low Effective Output Capacitance (Coss = 168 pF)

• 100 Avalanche Tested

• TJ = 175°C

• This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Typical Applications

• SMPS (Switching Mode Power Supplies)

• Solar Inverters

• UPS (Uninterruptable Powere Supplies)

• Energy Storages