NTMT045N065SC1中文资料安森美半导体数据手册PDF规格书

特性 Features

 Typ. RDS(on) = 33 m @ VGS = 18 V

Typ. RDS(on) = 45 m @ VGS = 15 V

 Ultra Low Gate Charge (QG(tot) = 105 nC)

 Low Effective Output Capacitance (Coss = 162 pF)

 100 Avalanche Tested

 TJ = 175C

 RoHS Compliant

Typical Applications

 SMPS (Switching Mode Power Supplies)

 Solar Inverters

 UPS (Uninterruptable Power Supplies)

 Energy Storage