Silicon Carbide (SiC) MOSFET - EliteSiC, 44mohm, 650V, M2, TOLL

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • High Speed Switching with Low Capacitance (Coss = 133 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Suppl

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Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • Max Junction Temperature 175°C\n• Leadless thin SMD package\n• Kelvin Source Configuration\n• Ultra Low Gate Charge (Qg(tot) = 74 nC)\n• Low Effective Output Capacitance (Coss = 113 pF)\n• Zero reverse recovery current of body diode\n• Typ. RDS(on) = 44 mΩ @ Vgs : 18V\n• 650V rated\n• 100% Ava;

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Silicon Carbide (SiC) MOSFET – 44 mohm, 650 V, M2, TO-247-3L

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • Low Output Capacitance (Coss = 133 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second le

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Silicon Carbide (SiC) MOSFET - 44mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • Low Output Capacitance (Coss = 133 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Typical Applications • Automotive On Board Char

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安森美半导体