丝印：HL060N065SC1；Package：TO247-3L；Silicon Carbide (SiC) MOSFET – 44 mohm, 650 V, M2, TO-247-3L

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • Low Output Capacitance (Coss = 133 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second le

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Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • TJ = 175°C\n• High reliability at high temperature ambient\n• Ultra Low Gate Charge (Typ. Qg = 74 nC)\n• Low switching loss\n• High Speed Switching with Low Capacitance (Coss = 133 pF)\n• Low switching loss\n• Zero reverse recovery current of body diode\n• Higher system reliability in LLC and Phas;

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安森美半导体

Silicon Carbide (SiC) MOSFET - 44mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • Low Output Capacitance (Coss = 133 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Typical Applications • Automotive On Board Char

文件：219.65 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - 44mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • Low Output Capacitance (Coss = 133 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies) • Solar Inve

文件：314.65 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 44mohm, 650V, M2, TOLL

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • High Speed Switching with Low Capacitance (Coss = 133 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Suppl

文件：451.77 Kbytes 页数：8 Pages

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安森美半导体