NTBG060N065SC1

Marking：BG060N065SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET - 44mohm, 650V, M2, D2PAK-7L

Features •Typ.RDS(on)=44m@VGS=18VTyp.RDS(on)=60m@VGS=15V •UltraLowGateCharge(QG(tot)=74nC) •LowOutputCapacitance(Coss=133pF) •100AvalancheTested •TJ=175°C •RoHSCompliant TypicalApplications •SMPS(SwitchingModePowerSupplies) •SolarInve

NTBL060N065SC1

SiliconCarbide(SiC)MOSFET-EliteSiC,44mohm,650V,M2,TOLL

Features •Typ.RDS(on)=44m@VGS=18V Typ.RDS(on)=60m@VGS=15V •UltraLowGateCharge(QG(tot)=74nC) •HighSpeedSwitchingwithLowCapacitance(Coss=133pF) •100AvalancheTested •TJ=175°C •RoHSCompliant TypicalApplications •SMPS(SwitchingModePowerSuppl

NTHL060N065SC1

SiliconCarbide(SiC)MOSFET–44mohm,650V,M2,TO-247-3L

Features •Typ.RDS(on)=44m@VGS=18V Typ.RDS(on)=60m@VGS=15V •UltraLowGateCharge(QG(tot)=74nC) •LowOutputCapacitance(Coss=133pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondle

NVBG060N065SC1

SiliconCarbide(SiC)MOSFET-44mohm,650V,M2,D2PAK-7L

Features •Typ.RDS(on)=44m@VGS=18V Typ.RDS(on)=60m@VGS=15V •UltraLowGateCharge(QG(tot)=74nC) •LowOutputCapacitance(Coss=133pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •RoHSCompliant TypicalApplications •AutomotiveOnBoardChar