丝印：BG060N065SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET - 44mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • Low Output Capacitance (Coss = 133 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies) • Solar Inve

文件：314.65 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • High Junction Temperature (Tj = 175°C)\n• Higher system reliability\n• Kelvin Source Configuration\n• Low gate noise and switching loss\n• Ultra Low Gate Charge (QG(tot) = 74 nC)\n• Low switching loss\n• Low Output Capacitance (Coss = 133 pF)\n• Low switching loss\n• Zero reverse recovery current ;

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 44mohm, 650V, M2, TOLL

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • High Speed Switching with Low Capacitance (Coss = 133 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Suppl

文件：451.77 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 44 mohm, 650 V, M2, TO-247-3L

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • Low Output Capacitance (Coss = 133 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second le

文件：272.5 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET - 44mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • Low Output Capacitance (Coss = 133 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Typical Applications • Automotive On Board Char

文件：219.65 Kbytes 页数：8 Pages

ONSEMI

安森美半导体