NTBL045N065SC1中文资料碳化硅（SiC）MOSFET – EliteSiC系列，33 mohm，650V，M2，TOLL封装数据手册ONSEMI规格书

描述 Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).

特性 Features

• High Junction Temperature (Tj = 175°C)
• Higher system reliability
• Leadless thin SMD package
• High power density
• Kelvin Source Configuratio
• Low gate noise and switching loss
• Ultra Low Gate Charge (Qg(tot) = 105 nC)
• Low switching loss
• Low Effective Output Capacitance (Coss = 162 pF)
• Low switching loss
• Zero reverse recovery current of body diode
• Higher system reliability in LLC and Phase shift full bridge circuit
• Typ. RDS(on) = 31 mΩ @ Vgs : 18V
• Low conduction loss
• 650V rated
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
• Moisture Sensitivity Level 1 guarantee
• Internal Gate Resistance: 3.1 Ω

应用 Application

• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• UPS / ESS
• Solar