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NTBG080N120SC1数据手册ONSEMI中文资料规格书
NTBG080N120SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• Low On Resistance
• RDSson = 80mΩ typ
• High Junction Temperature
• Tj = 175C
• Ultra Low Gate Charge
• Low Effective Output Capacitance
• This device is RoHS Compliant
应用 Application
• DC-DC Converter
• Boost Inverter
• UPS
• Solar
• Charging Station
• Motor Drive
技术参数
- 制造商编号
：NTBG080N120SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Product Preview
- Channel Polarity
：N-Channel
- Configuration
：Single
- V(BR)DSS Min (V)
：1200
- VGS Max (V)
：20
- VGS(th) Max (V)
：2.83
- ID Max (A)
：56.4
- PD Max (W)
：390
- Ciss Typ (pF)
：1285
- Package Type
：D2PAK7 (TO-263-7L HV)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
onsemi |
23+ |
D2PAK-7L |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
ON |
22+ |
NA |
17261 |
原装正品支持实单 |
询价 | ||
ON/安森美 |
22+ |
TO-263 |
9000 |
原装正品,支持实单! |
询价 | ||
onsemi(安森美) |
24+ |
D2PAK-7L |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
ON/安森美 |
22+ |
TO-263 |
3000 |
原装正品 |
询价 | ||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
onsemi(安森美) |
2025+ |
D2PAK-7 |
55740 |
询价 | |||
ON/安森美 |
2324+ |
TO-263 |
78920 |
二十余载金牌老企,研究所优秀合供单位,您的原厂窗口 |
询价 |
