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NTBG080N120SC1中文资料Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L数据手册ONSEMI规格书
NTBG080N120SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• Low On Resistance
• RDSson = 80mΩ typ
• High Junction Temperature
• Tj = 175C
• Ultra Low Gate Charge
• Low Effective Output Capacitance
• This device is RoHS Compliant
应用 Application
• DC-DC Converter
• Boost Inverter
• UPS
• Solar
• Charging Station
• Motor Drive
技术参数
- 制造商编号
：NTBG080N120SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Product Preview
- Channel Polarity
：N-Channel
- Configuration
：Single
- V(BR)DSS Min (V)
：1200
- VGS Max (V)
：20
- VGS(th) Max (V)
：2.83
- ID Max (A)
：56.4
- PD Max (W)
：390
- Ciss Typ (pF)
：1285
- Package Type
：D2PAK7 (TO-263-7L HV)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
D2PAK-7L |
15764 |
公司只做原装正品,假一赔十 |
询价 | ||
onsemi |
23+ |
D2PAK-7L |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
ON/安森美 |
22+ |
TO-263 |
9000 |
原装正品,支持实单! |
询价 | ||
onsemi(安森美) |
24+ |
D2PAK-7L |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
ON/安森美 |
22+ |
TO-263 |
3000 |
原装正品 |
询价 | ||
ON |
两年内 |
NA |
769 |
实单价格可谈 |
询价 | ||
ON(安森美) |
25+ |
TO-263 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ON/安森美 |
24+ |
TO-263 |
2000 |
原装现货 假一罚十 |
询价 | ||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 |
