首页>NTBG020N120SC1>规格书详情
NTBG020N120SC1数据手册ONSEMI中文资料规格书
NTBG020N120SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• Low On Resistance
• RDSson = 20mΩ typ
• Ultra Low Gate Charge
• 220nC typ
• High Junction Temperature
• Tj = 175C
• High UIS, Surge Current, and Avalanche
• 264mJ
应用 Application
• DC-DC Converter
• Boost Inverter
• Solar
• Charging Station
• Motor Drive
• AUX Power
技术参数
- 制造商编号
:NTBG020N120SC1
- 生产厂家
:ONSEMI
- Pb-free
:Pb
- Halide free
:H
- Status
:Active
- Channel Polarity
:N-Channel
- Configuration
:Single
- V(BR)DSS Min (V)
:1200
- VGS Max (V)
:25
- VGS(th) Max (V)
:4.3
- ID Max (A)
:98
- PD Max (W)
:468
- RDS(on) Max @ VGS = 2.5 V(mΩ)
:NA
- RDS(on) Max @ VGS = 4.5 V(mΩ)
:NA
- RDS(on) Max @ VGS = 10 V(mΩ)
:NA
- Qg Typ @ VGS = 4.5 V (nC)
:NA
- Qg Typ @ VGS = 10 V (nC)
:NA
- Ciss Typ (pF)
:2943
- Package Type
:D2PAK7 (TO-263-7L HV)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
D2PAK-7L |
15016 |
公司只做原装正品,假一赔十 |
询价 | ||
ON SEMICONDUCTOR |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 | ||
Onsemi/安森美 |
23+ |
TO263 |
3050 |
专业帮助客户找货 配单,诚信可靠! |
询价 | ||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
onsemi |
23+ |
D2PAK-7 |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
onsemi(安森美) |
24+ |
TO-263-7 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
onsemi(安森美) |
2025+ |
TO-263-7 |
55740 |
询价 | |||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 |