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NTBG160N120SC1中文资料Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L数据手册ONSEMI规格书
NTBG160N120SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• Ultra Low Gate Charge
• typ. QG(tot) = 33.8 nC
• High Speed Switching and Low Capacitance
• typ. Coss = 50.7 pF
• 1200V rated
• 100% Avalanche Tested
• Devices are RoHS Compliant
应用 Application
• DC/DC Converter
• Boost Inverter
• UPS
• Solar
• Charging Station
• Motor Drive
• AUX Power
技术参数
- 制造商编号
：NTBG160N120SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Product Preview
- V(BR)DSS Min (V)
：1200
- VGS Max (V)
：20
- VGS(th) Max (V)
：2.83
- ID Max (A)
：31
- PD Max (W)
：238
- Ciss Typ (pF)
：690
- Package Type
：D2PAK7 (TO-263-7L HV)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
14136 |
公司只做原装正品,假一赔十 |
询价 | |||
Onsemi |
22+ |
TO263 |
25000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
询价 | ||
onsemi |
23+ |
D2PAK-7 |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
ON/安森美 |
22+ |
TO-263 |
9000 |
原装正品,支持实单! |
询价 | ||
onsemi(安森美) |
24+ |
TO-263-7 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
ON/安森美 |
22+ |
TO-263 |
3000 |
原装正品 |
询价 | ||
ON |
两年内 |
NA |
769 |
实单价格可谈 |
询价 | ||
ON(安森美) |
25+ |
TO-263 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ON/安森美 |
24+ |
TO-263 |
2000 |
原装现货 假一罚十 |
询价 |
