功率 MOSFET，N 沟道，标准门极，60 V，110 A，2.7 mΩ

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Low Qrr\n• Minimize switching loss\n• Soft recovery body diode\n• Reduced EMI and voltage spike\n• Low RDS(on)\n• Minimize conduction loss\n• RoHS compliant\n• Compact design\n• UIS Capability;

ONSEMI

安森美半导体

丝印：NTBS2D7N；Package：D2PAK；N?륝hannel PowerTrench MOSFET 60 V, 110 A, 2.7 m

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ONSEMI

安森美半导体

DIP-2

RUILON瑞隆源

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SMD

TDK

东电化

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DIP

VISHAY/威世

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