NTBG040N120SC1_V02技术资料参数原装现货-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NTBG040N120SC1_V02	文件：330.93 Kbytes Page：8 Pages	Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, D2PAK-7 Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ 文件：330.93 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTHL040N120SC1_V02	文件：313.53 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-3L Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (typ. Coss = 140 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • 文件：313.53 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTC5D-11	文件：0 bytes Page：0 Pages	DIP-2	RUILON瑞隆源上传：深圳市乐创天科技有限公司	RUILON瑞隆源
NTCG163JF103FT1	文件：0 bytes Page：0 Pages	SMD	TDK 东电化上传：北京天阳诚业科贸有限公司	TDK
NTCLE413E2103F102L	文件：0 bytes Page：0 Pages	DIP	VISHAY/威世上传：深圳市赛美科科技有限公司	VISHAY/威世

更多NTBG040N120SC1_V02供应商更新时间2025-12-5 8:01:00