Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 60 m @ VGS = 15 V • Typ. RDS(on) = 43 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 88 nC) • High Speed Switching with Low Capacitance (Coss = 115 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−F

文件：794.72 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - SiC Power, Single N-Channel, D2PAK-7L 900 V, 60 m, 44 A

文件：802.73 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L

Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster op • Typical RDSon\n• 60 mΩ\n• High Speed Switching and Low Capacitance\n• Coss = 115pF\n• 100% UIL Tested\n• Devices are RoHS Compliant;

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 60 m @ VGS = 15 V • Typ. RDS(on) = 43 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 88 nC) • High Speed Switching with Low Capacitance (Coss = 115 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−F

文件：794.72 Kbytes 页数：8 Pages

ONSEMI

安森美半导体