NTBG060N090SC1

Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, D2PAK-7L

Features •Typ.RDS(on)=60m@VGS=15V •Typ.RDS(on)=43m@VGS=18V •UltraLowGateCharge(QG(tot)=88nC) •HighSpeedSwitchingwithLowCapacitance(Coss=115pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−F

NTBG060N090SC1

MOSFET - SiC Power, Single N-Channel, D2PAK-7L 900 V, 60 m, 44 A

NTBG060N090SC1_V01

Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, D2PAK-7L

Features •Typ.RDS(on)=60m@VGS=15V •Typ.RDS(on)=43m@VGS=18V •UltraLowGateCharge(QG(tot)=88nC) •HighSpeedSwitchingwithLowCapacitance(Coss=115pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−F

NTHL060N090SC1

MOSFET-SiCPower,SingleN-Channel900V,60m,46A

NTHL060N090SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,60mohm,900V,M2,TO-247-3L

Features •Typ.RDS(on)=60m@VGS=15V •Typ.RDS(on)=43m@VGS=18V •UltraLowGateCharge(typ.QG(tot)=87nC) •LowEffectiveOutputCapacitance(typ.Coss=113pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecond

NVBG060N090SC1

MOSFET-SiCPower,SingleN-Channel,D2PAK-7L

NVHL060N090SC1

MOSFET-SiCPower,SingleN-Channel