NP80N03KDE-E1-AY规格书应用电路贸易商瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NP80N03KDE-E1-AY	文件：219.37 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID 文件：219.37 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
NP80N03KDE-E1-AY	文件：297.39 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2600 pF TYP. 文件：297.39 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP9926ASR	文件：0 bytes Page：0 Pages	南麟 SOP-8	南麟上传：深圳市勇康微科技有限公司	南麟
NPA-100B-015A	文件：0 bytes Page：0 Pages	Amphenol Advanced Sensors 14-SOIC 模块	Amphenol Advanced Sensors 上传：深圳市汇创佳电子科技有限公司	Amphenol Advanced Sensors
NPA-500B-005G	文件：0 bytes Page：0 Pages	Amphenol Advanced Sensors 14-SMD 模块	Amphenol Advanced Sensors 上传：深圳市汇创佳电子科技有限公司	Amphenol Advanced Sensors

更多NP80N03KDE-E1-AY供应商更新时间2025-10-4 10:10:00