首页 >NP80N04PUG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NP80N04PUG | MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP80N04NUGandNP80N04PUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Nonlogiclevel •Superlowon-stateresistance -NP80N04NUG RDS(on)=4.8mΩMAX.(VGS=10V,ID=40A) -NP80N04PUG RDS(on | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
NP80N04PUG | Product Scout Automotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP80N04NUGandNP80N04PUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Nonlogiclevel •Superlowon-stateresistance -NP80N04NUG RDS(on)=4.8mΩMAX.(VGS=10V,ID=40A) -NP80N04PUG RDS(on | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP80N04NUGandNP80N04PUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Nonlogiclevel •Superlowon-stateresistance -NP80N04NUG RDS(on)=4.8mΩMAX.(VGS=10V,ID=40A) -NP80N04PUG RDS(on | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel 40 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel4-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
N-Channel40-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC |
详细参数
- 型号：
NP80N04PUG
- 制造商：
RENESAS
- 制造商全称：
Renesas Technology Corp
- 功能描述：
MOS FIELD EFFECT TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-263 |
37650 |
全新原装真实库存含13点增值税票! |
询价 | ||
23+ |
N/A |
89950 |
正品授权货源可靠 |
询价 | |||
RENESAS/瑞萨 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
RENESAS/瑞萨 |
2022+ |
TO-263 |
79999 |
询价 | |||
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
询价 | ||
isc |
2024 |
D2PAK/TO-263 |
10000 |
国产品牌isc,可替代原装 |
询价 | ||
RENESAS/瑞萨 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-263 |
12500 |
瑞萨全系列在售,终端可出样品 |
询价 | ||
NEC-日本电气 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VB |
2019 |
TO-263 |
55000 |
绝对原装正品假一罚十! |
询价 |
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