MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID

文件：219.37 Kbytes 页数：10 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2600 pF TYP.

文件：297.39 Kbytes 页数：12 Pages

RENESAS

瑞萨

南麟
SOP-8

南麟

上传：深圳市勇康微科技有限公司

Amphenol Advanced Sensors
14-SOIC 模块

Amphenol Advanced Sensors

上传：深圳市汇创佳电子科技有限公司

Amphenol Advanced Sensors
14-SMD 模块

Amphenol Advanced Sensors

上传：深圳市汇创佳电子科技有限公司