MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode

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MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF

文件：212.96 Kbytes 页数：10 Pages

NEC

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SWITCHING N-CHANNEL POWER MOS FET

文件：299.83 Kbytes 页数：12 Pages

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南麟
SOP-8

南麟

上传：深圳市勇康微科技有限公司

Amphenol Advanced Sensors
14-SOIC 模块

Amphenol Advanced Sensors

上传：深圳市汇创佳电子科技有限公司