首页>NP80N03KDE-E2-AY>规格书详情
NP80N03KDE-E2-AY中文资料瑞萨数据手册PDF规格书
NP80N03KDE-E2-AY规格书详情
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
• Channel Temperature 175 degree rated
• Super Low on-state Resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A)
RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A)
• Low input capacitance
Ciss = 2600 pF TYP.
产品属性
- 型号：
NP80N03KDE-E2-AY
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-220 |
12500 |
瑞萨全系列在售,终端可出样品 |
询价 | ||
VBsemi |
21+ |
TO263 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
RENESAS(瑞萨)/IDT |
24+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
NEC |
22+ |
TO-220 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-220 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
询价 | ||
NEC |
6000 |
面议 |
19 |
TO-263 |
询价 | ||
VBsemi |
24+ |
TO263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
VBsemi |
24+ |
TO263 |
5000 |
全新原装正品,现货销售 |
询价 | ||
NEC |
24+ |
TO-263 |
8866 |
询价 | |||
ST |
24+ |
TO-262 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
