MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode

文件：299.68 Kbytes 页数：12 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T

文件：213.3 Kbytes 页数：10 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件：300.26 Kbytes 页数：12 Pages

RENESAS

瑞萨

南麟
SOP-8

南麟

上传：深圳市勇康微科技有限公司

Amphenol Advanced Sensors
14-SOIC 模块

Amphenol Advanced Sensors

上传：深圳市汇创佳电子科技有限公司