MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900

文件：312.56 Kbytes 页数：12 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4

文件：225.97 Kbytes 页数：10 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件：225.97 Kbytes 页数：10 Pages

NEC

瑞萨

SOP-8

南麟

上传：深圳市勇康微科技有限公司

14-SOIC 模块

Amphenol Advanced Sensors

上传：深圳市汇创佳电子科技有限公司