首页 >NP82N055DHE>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NP82N055DHE | MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pF | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | |
NP82N055DHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | |
NP82N055DHE | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
NP82N055DHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
NP82N055DHE
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
TO-262 |
8866 |
询价 | |||
NEC |
6000 |
面议 |
19 |
TO-262 |
询价 | ||
NEC |
TO-263 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
日本NEC |
23+ |
TO-263 |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
询价 | ||
NEC |
22+ |
TO-263 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
NEC |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
1922+ |
TO-263 |
216 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-251 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 |
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