MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low input capacitance Ciss = 4

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RENESAS

瑞萨

SOP-8

南麟

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14-SOIC 模块

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14-SMD 模块

Amphenol Advanced Sensors

上传：深圳市汇创佳电子科技有限公司