MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode

文件：429.99 Kbytes 页数：12 Pages

RENESAS

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上传：深圳市汇创佳电子科技有限公司