MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8 mΩ MAX. (VGS = −10 V, ID = −41 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41 A) • Low input capacitance Cis

文件：182.52 Kbytes 页数：7 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8 mΩ MAX. (VGS = −10 V, ID = −41 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41 A)

文件：374.73 Kbytes 页数：9 Pages

RENESAS

瑞萨

SOP-8

南麟

上传：深圳市勇康微科技有限公司

14-SOIC 模块

Amphenol Advanced Sensors

上传：深圳市汇创佳电子科技有限公司

14-SMD 模块

Amphenol Advanced Sensors

上传：深圳市汇创佳电子科技有限公司