首页 >NP86N04KHE>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NP86N04KHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
NP86N04KHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | |
NP86N04KHE | Product Scout Automotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) •Lowinputcapacitance Ciss=5900pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
NP86N04KHE
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-263 |
35400 |
全新原装真实库存含13点增值税票! |
询价 | ||
NEC |
08+(pbfree) |
TO-263 |
8866 |
询价 | |||
NEC |
6000 |
面议 |
19 |
TO-263 |
询价 | ||
NEC |
2023+ |
TO-263 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
TECCOR/LITT |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
NEC |
23+ |
TO-263 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
NEC |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 | ||
NEC |
2022+ |
TO-263 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
询价 | ||
isc |
2024 |
D2PAK/TO-263 |
140 |
国产品牌isc,可替代原装 |
询价 |
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