首页 >NP88N075CUE>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NP88N075CUE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | |
NP88N075CUE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC |
详细参数
- 型号：
NP88N075CUE
- 功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 88A I(D) | TO-220AB
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
08+(pbfree) |
TO-220AB |
8866 |
询价 | |||
NEC |
23+ |
TO-220AB |
12159 |
全新原装 |
询价 | ||
NEC |
05+ |
原厂原装 |
1374 |
只做全新原装真实现货供应 |
询价 | ||
日本NEC |
1822+ |
TO220 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
NEC |
6000 |
面议 |
19 |
TO-220AB |
询价 | ||
日本NEC |
18+ |
TO220 |
41200 |
原装正品,现货特价 |
询价 | ||
VB |
2019 |
TO-220 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
VBSEMI/台湾微碧 |
TO-220 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
VBSEMI/台湾微碧 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
RENESAS |
21+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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