首页 >NP88N075EUE>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NP88N075EUE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | |
NP88N075EUE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=8200pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
NP88N075EUE
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
17+ |
TO-263 |
31518 |
原装正品 可含税交易 |
询价 | ||
NEC |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 | ||
NEC |
21+ |
SOT-263 |
10000 |
原装现货假一罚十 |
询价 | ||
日本NEC |
TO-263 |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
RENESAS/瑞萨 |
2022+ |
TO-263 |
79999 |
询价 | |||
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
询价 | ||
isc |
2024 |
D2PAK/TO-263 |
325 |
国产品牌isc,可替代原装 |
询价 | ||
RENESAS/瑞萨 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
NEC-日本电气 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
NEC |
08+(pbfree) |
TO-263 |
8866 |
询价 |
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