MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.4 mΩ MAX. (VGS = 10 V, ID = 43 A) • Low input capacitance Ciss = 5900 pF

文件：224.12 Kbytes 页数：10 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.4 mΩ MAX. (VGS = 10 V, ID = 43 A) • Low input capacitance Ciss = 5900 pF TYP. • Built-in gate protection diode

文件：436.87 Kbytes 页数：12 Pages

RENESAS

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上传：深圳市汇创佳电子科技有限公司