首页 >NP84N04DHE>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

NP84N04DHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NP84N04DHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP84N04DHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP84N04DHE-S12-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NP84N04DHE-S12-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP84N04EHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP84N04EHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NP84N04EHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP84N04KHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP84N04KHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    NP84N04DHE

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供应商型号品牌批号封装库存备注价格
NEC
24+
TO-262
8866
询价
NEC
6000
面议
19
TO-262
询价
NEC
23+
TO-262
50000
全新原装正品现货,支持订货
询价
NEC
21+
TO-262
10000
原装现货假一罚十
询价
NEC
24+
NA/
10000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
NEC
24+
TO-262
15000
原装现货假一赔十
询价
NEC
24+
TO-262
60000
询价
NEC
TO-263
22+
6000
十年配单,只做原装
询价
NEC
23+
TO-263
6000
原装正品,支持实单
询价
NEC
22+
TO-263
25000
只做原装进口现货,专注配单
询价
更多NP84N04DHE供应商 更新时间2025-7-27 15:30:00