MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF

文件：224.97 Kbytes 页数：10 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode

文件：429.99 Kbytes 页数：12 Pages

RENESAS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：242.41 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode

文件：429.99 Kbytes 页数：12 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF

文件：224.97 Kbytes 页数：10 Pages

NEC

瑞萨

Power MOSFETs-Power MOSFETs for Automotive

Renesas

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