首页 >NP82N055DHE-S12-AY>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NP82N055DHE-S12-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF TYP. • Built-in gate protection diode 文件：421.05 Kbytes 页数：12 Pages | RENESAS 瑞萨 | RENESAS | |
NP82N055DHE-S12-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET 文件：214 Kbytes 页数：10 Pages | NEC 瑞萨 | NEC | |
南麟 | 南麟 上传：深圳市勇康微科技有限公司 | 南麟 | ||
Amphenol Advanced Sensors | Amphenol Advanced Sensors | Amphenol Advanced Sensors | ||
Amphenol Advanced Sensors | Amphenol Advanced Sensors | Amphenol Advanced Sensors |
详细参数
- 型号：
NP82N055DHE-S12-AY
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
TO-262 |
8866 |
询价 | |||
NEC |
6000 |
面议 |
19 |
TO-262 |
询价 | ||
NEC |
TO-263 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
日本NEC |
23+ |
TO-263 |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
询价 | ||
NEC |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
1922+ |
TO-263 |
216 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-251 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
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