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型号	下载订购	功能描述	制造商上传企业	LOGO
NP82N055ELE	文件：226.05 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID 文件：226.05 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
NP82N055ELE	文件：431.49 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low input capacitance Ciss = 4 文件：431.49 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP82N055ELE	文件：307.04 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：307.04 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
NP82N055ELE-E1-AY	文件：431.49 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low input capacitance Ciss = 4 文件：431.49 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP82N055ELE-E1-AY	文件：226.05 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID 文件：226.05 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
NP82N055ELE-E2-AY	文件：226.05 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID 文件：226.05 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
NP82N055ELE-E2-AY	文件：431.49 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low input capacitance Ciss = 4 文件：431.49 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP82N055ELE	文件：300 bytes Page：1 Pages	Power MOSFETs-Power MOSFETs for Automotive	Renesas 瑞萨	Renesas

技术参数

ID (A)：
82
Downloadable：
SPICE
RDS (ON) (mohm) max. @10V or 8V：
8.4
Nch/Pch：
N
Application：
Automotive Use
Automotive：
YES
Series Name：
NP Series
VDSS (V) max.：
55

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	NP82N055ELE	RENESAS/瑞萨	23+	TO-251	69820	终端可以免费供样,支持BOM配单!	询价
深圳市河锋鑫科技有限公司	NP82N055ELE	NEC	22+	TO-263	6000	十年配单,只做原装	询价
深圳市一线半导体有限公司	NP82N055KHE	NEC	24+	TO-263	8866		询价
现代芯城（深圳）科技有限公司	NP82N055KHE-E1-AZ		24+	N/A	56000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市赛芯源科技有限公司	NP82N055KLE	NEC	19+	TO-263	32000	原装正品,现货特价	询价
京海半导体(深圳)有限公司	NP82N055KLE	NEC	25+	TO-263	10000	原装现货假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	NP82N055KLE	NEC	23+	TO-263	33000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市美思瑞电子科技有限公司	NP82N055KLE	NEC	22+	TO-263	12245	现货,原厂原装假一罚十!	询价
深圳市宏捷佳电子科技有限公司	NP82N055KLE	NEC	25+	TO-263	12300	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市鹏和科技有限公司	NP82N055MHE	R	24+	T0-220	5000	全现原装公司现货	询价

更多NP82N055ELE供应商更新时间2026-1-28 18:00:00

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