NP82N055NLE说明书PDF资料供应商报价瑞萨-114ic电子网

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NP82N055NLE	文件：226.05 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NP82N055NLE	文件：431.49 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP82N055NLE	文件：5.67799 Mbytes Page：6 Pages	Product Scout Automotive	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP82N055NLE-S18-AY	文件：226.05 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NP82N055NLE-S18-AY	文件：431.49 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
82N055	文件：319.92 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP82N055MUGandNP82N055NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Nonlogiclevel •Superlowon-stateresistance RDS(on)=6.0mΩMAX.(VGS=10V,ID=41A) •Highcurrentrating ID(DC)=±82A •Low	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP82N055CHE	文件：77.36 Kbytes Page：8 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pF	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NP82N055CHE	文件：214 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NP82N055CHE	文件：421.05 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pFTYP. •Built-ingateprotectiondiode	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP82N055CLE	文件：431.49 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP82N055CLE	文件：226.05 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NP82N055DHE	文件：214 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NP82N055DHE	文件：77.36 Kbytes Page：8 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pF	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NP82N055DHE	文件：421.05 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pFTYP. •Built-ingateprotectiondiode	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP82N055DLE	文件：431.49 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP82N055DLE	文件：226.05 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NP82N055EHE	文件：214 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NP82N055EHE	文件：77.36 Kbytes Page：8 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pF	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NP82N055EHE	文件：421.05 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pFTYP. •Built-ingateprotectiondiode	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP82N055ELE	文件：431.49 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

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详细参数

型号：
NP82N055NLE
制造商：
Renesas Electronics Corporation

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳兆威电子有限公司	NP82N055NLE	NEC	23+	TO-262	90000	只做原厂渠道价格优势可提供技术支持	询价
无锡固电半导体股份有限公司	NP82N055NLE	isc	2024	I2PAK/TO-262	175	国产品牌isc,可替代原装	询价
深圳市晨豪科技有限公司	NP82N055NLE	RENESAS/瑞萨	23+	TO-262	89630	当天发货全新原装现货	询价
深圳市星辰微电科技有限公司	NP82N055NLE	RENESAS/瑞萨	22+	TO-262	12500	瑞萨全系列在售,终端可出样品	询价
深圳市惊羽科技有限公司	NP82N055NLE	NEC-日本电气	24+25+/26+27+	TO-262-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市国宇半导体科技有限公司	NP82N055NUG-S18-AY	RENESAS/瑞萨	23+	TO-262	10000	公司只做原装正品	询价
深圳市高捷芯城科技有限公司	NP82N055NUG-S18-AY	RENESAS(瑞萨)/IDT	23+	TO262	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市弘扬芯城科技有限公司	NP82N055NUG-S18-AY	RENESAS(瑞萨)/IDT	23+	TO262	6000		询价
深圳市一线半导体有限公司	NP82N055PUG	NEC	08+(pbfree)	TO-263	8866		询价
深圳市百视威讯电子科技有限公司	NP82N055PUG		23+	N/A	89950	正品授权货源可靠	询价

更多NP82N055NLE供应商更新时间2024-5-25 8:48:00

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